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  1 motorola smallsignal transistors, fets and diodes device data   npn silicon maximum ratings rating symbol bc 546 bc 547 bc 548 unit collector emitter voltage v ceo 65 45 30 vdc collector base voltage v cbo 80 50 30 vdc emitter base voltage v ebo 6.0 vdc collector current e continuous i c 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watt mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r  ja 200 c/w thermal resistance, junction to case r  jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector emitter breakdown voltage bc546 (i c = 1.0 ma, i b = 0) bc547 bc548 v (br)ceo 65 45 30 e e e e e e v collector base breakdown voltage bc546 (i c = 100 m adc) bc547 bc548 v (br)cbo 80 50 30 e e e e e e v emitter base breakdown voltage bc546 (i e = 10  a, i c = 0) bc547 bc548 v (br)ebo 6.0 6.0 6.0 e e e e e e v collector cutoff current (v ce = 70 v, v be = 0) bc546 (v ce = 50 v, v be = 0) bc547 (v ce = 35 v, v be = 0) bc548 (v ce = 30 v, t a = 125 c) bc546/547/548 i ces e e e e 0.2 0.2 0.2 e 15 15 15 4.0 na m a order this document by bc546/d    semiconductor technical data

  

  
case 2904, style 17 to92 (to226aa) 1 2 3 ? motorola, inc. 1996 collector 1 2 base 3 emitter rev 1


  

  
2 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain (i c = 10 m a, v ce = 5.0 v) bc547a/548a bc546b/547b/548b bc548c (i c = 2.0 ma, v ce = 5.0 v) bc546 bc547 bc548 bc547a/548a bc546b/547b/548b bc547c/bc548c (i c = 100 ma, v ce = 5.0 v) bc547a/548a bc546b/547b/548b bc548c h fe e e e 110 110 110 110 200 420 e e e 90 150 270 e e e 180 290 520 120 180 300 e e e 450 800 800 220 450 800 e e e e collector emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) (i c = 10 ma, i b = see note 1) v ce(sat) e e e 0.09 0.2 0.3 0.25 0.6 0.6 v base emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) v be(sat) e 0.7 e v baseemitter on voltage (i c = 2.0 ma, v ce = 5.0 v) (i c = 10 ma, v ce = 5.0 v) v be(on) 0.55 e e e 0.7 0.77 v smallsignal characteristics current gain e bandwidth product (i c = 10 ma, v ce = 5.0 v, f = 100 mhz) bc546 bc547 bc548 f t 150 150 150 300 300 300 e e e mhz output capacitance (v cb = 10 v, i c = 0, f = 1.0 mhz) c obo e 1.7 4.5 pf input capacitance (v eb = 0.5 v, i c = 0, f = 1.0 mhz) c ibo e 10 e pf smallsignal current gain (i c = 2.0 ma, v ce = 5.0 v, f = 1.0 khz) bc546 bc547/548 bc547a/548a bc546b/547b/548b bc547c/548c h fe 125 125 125 240 450 e e 220 330 600 500 900 260 500 900 e noise figure (i c = 0.2 ma, v ce = 5.0 v, r s = 2 k  , bc546 f = 1.0 khz, d f = 200 hz) bc547 bc548 nf e e e 2.0 2.0 2.0 10 10 10 db note 1: i b is value for which i c = 11 ma at v ce = 1.0 v.


  

  
3 motorola smallsignal transistors, fets and diodes device data figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, vol tage (vol ts) v ce , collect oremitter vol tage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c 55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 bc547/bc548 figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. currentgain bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, cap acitance (pf) f , currentgain bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib


  

  
4 motorola smallsignal transistors, fets and diodes device data bc547/bc548 figure 7. dc current gain i c , collector current (ma) figure 8. aono voltage i c , collector current (ma) 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 0.2 1.0 10 200 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collect oremitter vol tage (vol ts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma h fe , dc current gain (normalized) v, vol tage (vol ts) v ce = 5 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 55 c to 125 c q vb for v be bc546 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. currentgain bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, cap acitance (pf) f , currentgain bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib


  

  
5 motorola smallsignal transistors, fets and diodes device data package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n x x seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 12.70 l 0.250 6.35 n 0.080 0.105 2.04 2.66 p 0.100 2.54 r 0.115 2.93 v 0.135 3.43 1 case 02904 (to226aa) issue ad style 17: pin 1. collector 2. base 3. emitter


  

  
6 motorola smallsignal transistors, fets and diodes device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation consequential or incidental damages. at ypicalo parameters can and do vary in dif ferent applications. all operating parameters, including at ypicalso must be validated for each customer application by customer ' s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur . should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/af firmative action employer . how to reach us: usa/europe : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, toshikatsu otsuki, p.o. box 20912; phoenix, arizona 85036. 18004412447 6f seibubutsuryucenter, 3142 tatsumi kotoku, tokyo 135, japan. 0335218315 mfax : rmf ax0@email.sps.mot.com t ouchtone (602) 2446609 hong kong : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok road, tai po, n.t., hong kong. 85226629298 bc546/d   ?


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